Ali SMAHasan SMREbrahimi A2023-10-192023-10-252021-10-092023-10-192023-10-252021-10-09Ali SMA, Hasan SMR. (2021). A 6 ghz integrated high-efficiency class-f⁻¹ power amplifier in 65 nm cmos achieving 47.8% peak pae. Electronics (Switzerland). 10. 20.http://hdl.handle.net/10179/20391This paper reports a “single-transistor” Class-F−1 power amplifier (PA) in 65 nm CMOS, which operates at the microwave center frequency of 6 GHz. The PA is loaded with a Class-F−1 harmonic control network, employing a new “parasitic-aware” topology deduced using a novel iterative algorithm. A dual-purpose output matching network is designed, which not only serves the purpose of output impedance matching, but also reinforces the harmonic control of the Class-F−1 harmonic network. This proposed PA yields a peak power-added efficiency (PAE) of 47.8%, which is one of the highest when compared to previously reported integrated microwave/millimeter-wave PAs in CMOS and SiGe technologies. The amplifier shows a saturated output power of 14.4 dBm along with an overall gain of 13.8 dB.(c) 2021 The Author/sCC BYhttps://creativecommons.org/licenses/by/4.0/Class-Finverse Class-FCMOSpower amplifierhigh efficiency5Gmobile communications6 GHzJournal article10.3390/electronics102024502079-92922023-10-18Massey_Darkjournal-article