A Low-Power Voltage Limiter/Regulator IC in Standard Thick-Oxide 130 nm CMOS for Inductive Power Transfer Application

Lapshev SHasan SMREZAUL18/12/201418/12/2014Advances in Power Electronics, 2014, 2014 (2014) pp. ? - ? (6)2090-1828https://hdl.handle.net/10179/7466This paper presents a novel CMOS low-power voltage limiter/regulator circuit with hysteresis for inductive power transfer in an implanted telemetry application. The circuit controls its rail voltage to the maximum value of 3 V DC employing 100 mV of comparator hysteresis. It occupies a silicon area of only 127 μm × 125 μm using the 130 nm IBM CMOS process. In addition, the circuit dissipated less than 1 mW and was designed using thick-oxide 3.6 V NMOS and PMOS devices available in the process library.? - ? (6)A Low-Power Voltage Limiter/Regulator IC in Standard Thick-Oxide 130 nm CMOS for Inductive Power Transfer ApplicationJournal article10.1155/2014/317523237071Massey_Dark