A Low-Power Voltage Limiter/Regulator IC in Standard Thick-Oxide 130 nm CMOS for Inductive Power Transfer Application

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dc.citation.volume2014 (2014)
dc.contributor.authorLapshev S
dc.contributor.authorHasan SMREZAUL
dc.date.available18/12/2014
dc.date.issued18/12/2014
dc.description.abstractThis paper presents a novel CMOS low-power voltage limiter/regulator circuit with hysteresis for inductive power transfer in an implanted telemetry application. The circuit controls its rail voltage to the maximum value of 3 V DC employing 100 mV of comparator hysteresis. It occupies a silicon area of only 127 μm × 125 μm using the 130 nm IBM CMOS process. In addition, the circuit dissipated less than 1 mW and was designed using thick-oxide 3.6 V NMOS and PMOS devices available in the process library.
dc.description.confidentialFALSE
dc.description.publication-statusPublished
dc.format.extent? - ? (6)
dc.identifierhttp://dx.doi.org/10.1155/2014/317523
dc.identifierArticle ID 317523
dc.identifier.citationAdvances in Power Electronics, 2014, 2014 (2014) pp. ? - ? (6)
dc.identifier.doi10.1155/2014/317523
dc.identifier.elements-id237071
dc.identifier.harvestedMassey_Dark
dc.identifier.issn2090-1828
dc.identifier.urihttps://hdl.handle.net/10179/7466
dc.publisherHindawi Publishing Corporation
dc.publisher.urihttp://dx.doi.org/10.1155/2014/317523
dc.relation.isPartOfAdvances in Power Electronics
dc.titleA Low-Power Voltage Limiter/Regulator IC in Standard Thick-Oxide 130 nm CMOS for Inductive Power Transfer Application
dc.typeJournal article
pubs.notesNot known
pubs.organisational-group/Massey University
pubs.organisational-group/Massey University/College of Sciences
pubs.organisational-group/Massey University/College of Sciences/School of Food & Advanced Technology Manawatu
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