A 6 GHz Integrated High-Efficiency Class-F−1 Power Amplifier in 65 nm CMOS Achieving 47.8% Peak PAE
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Date
2021-10-09
Open Access Location
Journal Title
Journal ISSN
Volume Title
Publisher
MDPI (Basel, Switzerland)
Rights
(c) 2021 The Author/s
CC BY
CC BY
Abstract
This paper reports a “single-transistor” Class-F−1 power amplifier (PA) in 65 nm CMOS, which operates at the microwave center frequency of 6 GHz. The PA is loaded with a Class-F−1 harmonic control network, employing a new “parasitic-aware” topology deduced using a novel iterative algorithm. A dual-purpose output matching network is designed, which not only serves the purpose of output impedance matching, but also reinforces the harmonic control of the Class-F−1 harmonic network. This proposed PA yields a peak power-added efficiency (PAE) of 47.8%, which is one of the highest when compared to previously reported integrated microwave/millimeter-wave PAs in CMOS and SiGe technologies. The amplifier shows a saturated output power of 14.4 dBm along with an overall gain of 13.8 dB.
Description
Keywords
Class-F, inverse Class-F, CMOS, power amplifier, high efficiency, 5G, mobile communications, 6 GHz
Citation
Ali SMA, Hasan SMR. (2021). A 6 ghz integrated high-efficiency class-f<sup>−1</sup> power amplifier in 65 nm cmos achieving 47.8% peak pae. Electronics (Switzerland). 10. 20.