A Process-Based Temperature Compensated On-Chip CMOS VHF VCRO in 130-nm Si-Ge BiCMOS by Implementing an Empirical Control Equation

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dc.citation.volume10
dc.contributor.authorHasan SMR
dc.contributor.editorSin S-W
dc.date.accessioned2023-10-18T21:26:27Z
dc.date.accessioned2023-10-19T20:38:40Z
dc.date.available2022-12-08
dc.date.available2023-10-18T21:26:27Z
dc.date.available2023-10-19T20:38:40Z
dc.date.issued2022-12-14
dc.date.updated2023-10-18T21:17:00Z
dc.description.abstractThis paper presents a low-power CMOS temperature and process compensated 150.9 MHz Very-high-frequency (VHF) voltage-controlled-ring-oscillator (VCRO) for on-chip integration. The design employs a CMOS temperature-sensor and novel feedback control circuitry to generate the internal control-voltage for the VCRO which ensures oscillation in the vicinity of the desired frequency despite variations in temperature. The control circuitry is the implementation of an empirical equation expressing a temperature sensor-voltage into a specific control-voltage for three different process corners using three different switches. The control-voltage calibrates against temperature variation for the specific process-corner in order to maintain the same frequency of oscillation. Simulations shows that the proposed design maintains the oscillator's frequency within 0.39% from -10°C to 90°C. The fabricated chip implemented in 130-nm GF 8HP Si-Ge BiCMOS process, occupies an area of 0.0242-mm2 and consumes 325 μW while operating with a 1 V supply-voltage. The performance was verified through experimental immersion of DUT (device-under-test) in a temperature-controlled water-bath in the range 22.5°C-70°C.
dc.description.confidentialfalse
dc.format.extent128664-128669
dc.identifier.citationRezaul Hasan SM. (2022). A Process-Based Temperature Compensated On-Chip CMOS VHF VCRO in 130-nm Si-Ge BiCMOS by Implementing an Empirical Control Equation. IEEE Access. 10. (pp. 128664-128669).
dc.identifier.doi10.1109/ACCESS.2022.3227566
dc.identifier.eissn2169-3536
dc.identifier.elements-typejournal-article
dc.identifier.harvestedMassey_Dark
dc.identifier.urihttp://hdl.handle.net/10179/20345
dc.languageEnglish
dc.publisherIEEE
dc.publisher.urihttps://ieeexplore.ieee.org/document/9975319
dc.relation.isPartOfIEEE Access
dc.rightsCC BY 4.0en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.subjectAnalog CMOS circuits
dc.subjecttemperature compensation
dc.subjectprocess compensation
dc.subjectvoltage-controlled-ring-oscillator
dc.subjectcircuit design
dc.subjectVHF
dc.subjectradio-frequency
dc.subjectwater-bath
dc.titleA Process-Based Temperature Compensated On-Chip CMOS VHF VCRO in 130-nm Si-Ge BiCMOS by Implementing an Empirical Control Equation
dc.typeJournal article
pubs.elements-id458851
pubs.organisational-groupOther
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