Journal Articles

Permanent URI for this collectionhttps://mro.massey.ac.nz/handle/10179/7915

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Author: search.filters.author.Hasan SMRSubject: search.filters.subject.Analog CMOS circuits

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    On the gm-Boosted Miller-Effect Minimized Inverter-Cascode Transimpedance Amplifier for Sensor Applications
    (IEEE, 2021-10-20) Zhang Y; Hasan SMR; Grujić D
    This paper presents the small-signal operation of a gm-boosted inverter-cascode transimpedance amplifier which has not been reported previously and whose comprehensive analysis is not available in any reported article or text-book. A simplified sequential equivalent-circuit method is employed which eliminates the need for complicated circuit analysis techniques. The analysis shows that the gain and the gain-bandwidth of the gm-boosted inverter-cascode transimpedance-amplifier is enhanced by the gain of the gm-boosting amplifier. This is due to the increased output impedance of the TIA, and, the reduced input-referred miller-effect capacitance through miller-effect trade-off employing the gm-boosting loop. To verify the actual performance improvement achieved, circuit simulation results as well as measured experimental results are also provided.
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    A Process-Based Temperature Compensated On-Chip CMOS VHF VCRO in 130-nm Si-Ge BiCMOS by Implementing an Empirical Control Equation
    (IEEE, 2022-12-14) Hasan SMR; Sin S-W
    This paper presents a low-power CMOS temperature and process compensated 150.9 MHz Very-high-frequency (VHF) voltage-controlled-ring-oscillator (VCRO) for on-chip integration. The design employs a CMOS temperature-sensor and novel feedback control circuitry to generate the internal control-voltage for the VCRO which ensures oscillation in the vicinity of the desired frequency despite variations in temperature. The control circuitry is the implementation of an empirical equation expressing a temperature sensor-voltage into a specific control-voltage for three different process corners using three different switches. The control-voltage calibrates against temperature variation for the specific process-corner in order to maintain the same frequency of oscillation. Simulations shows that the proposed design maintains the oscillator's frequency within 0.39% from -10°C to 90°C. The fabricated chip implemented in 130-nm GF 8HP Si-Ge BiCMOS process, occupies an area of 0.0242-mm2 and consumes 325 μW while operating with a 1 V supply-voltage. The performance was verified through experimental immersion of DUT (device-under-test) in a temperature-controlled water-bath in the range 22.5°C-70°C.